Production specification
P-Channel Enhancement Mode Field Effect Transistor BL2303
FEATURES
Electrostatic Sensitive D...
Production specification
P-Channel Enhancement Mode Field Effect Transistor BL2303
FEATURES
Electrostatic Sensitive Devices.
VDS (V) = -30V ID = -2.7A(VGS =-10V) RDS(ON) < 190mΩ (VGS = -10V)
RDS(ON) < 330mΩ (VGS = -4.5V)
Pb
Lead-free
APPLICATIONS
P-channel enhancement mode effect transistor. Switching application.
ORDERING INFORMATION
Type No.
Marking
BL2303
2303
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source
voltage
VGSS ID IDM
PD
RθJA
Gate -Source
voltage
Continuous Drain Current
@TC=25℃ @TC=70℃
Pulsed Drain Current
Power Dissipation
@TC=25℃ @TC=70℃ @TA=25℃ @TA=70℃
Thermal resistance,Junction-to-Ambient
TJ, Tstg
Junction and Storage Temperature
Value
-30
±20
-2.7 -2.2
-10 2.3 1.5 1.0 0.7 120
-55 to +150
Units V V A A
W
℃/W ℃
C306 Rev.A
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Production specification
P-Channel Enhancement Mode Field Effect Transistor BL2303
ELECTR...