Production specification
N-Channel Enhancement Mode Field Effect Transistor BL12N65
FEATURES
DPAK Worldwide Best RDS(on). High dv/dt Capability. Excellent Switching Performace.
Pb
Lead-free
Easy to Drive.
100% Avalanche Tested.
APPLICATIONS
N-channel Enhancement mode Effect Transistor.
Switching Applications.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VDS Drain-Source Voltage
650 V
VGS ID IDM PD.
N-Channel Power Mosfet
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL12N65
FEATURES
DPAK Worldwide Best RDS(on). High dv/dt Capability. Excellent Switching Performace.
Pb
Lead-free
Easy to Drive.
100% Avalanche Tested.
APPLICATIONS
N-channel Enhancement mode Effect Transistor.
Switching Applications.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VDS Drain-Source Voltage
650 V
VGS ID IDM PD IAR EAS dv/dt
Gate -Source Voltage
Maximum Drain Current(continuous) at TC=25℃ TC=100℃
Drain Current(pulsed)Note1
Power Dissipation at TC=25℃
Avalavche Current,Repetitive or Not-repetitive Single Pulse Avalanche Energy (starting Tj=25℃,ID=IAR,VDD=50V) Peak Diode Recovery Voltage Slope(Note2)
25 12 7.3 48 90 4 200 15
V A A W A mJ V/ns
RθJA Thermal Resistance,Junction-to-Ambient
Tj Tstg
Operating Junction and StorageTem-perature Range
Note:1.Pulse width limited by sa.