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BL12N65 Datasheet

Part Number BL12N65
Manufacturers GME
Logo GME
Description N-Channel Power Mosfet
Datasheet BL12N65 DatasheetBL12N65 Datasheet (PDF)

Production specification N-Channel Enhancement Mode Field Effect Transistor BL12N65 FEATURES  DPAK Worldwide Best RDS(on).  High dv/dt Capability.  Excellent Switching Performace. Pb Lead-free  Easy to Drive.  100% Avalanche Tested. APPLICATIONS  N-channel Enhancement mode Effect Transistor.  Switching Applications. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 650 V VGS ID IDM PD.

  BL12N65   BL12N65






N-Channel Power Mosfet

Production specification N-Channel Enhancement Mode Field Effect Transistor BL12N65 FEATURES  DPAK Worldwide Best RDS(on).  High dv/dt Capability.  Excellent Switching Performace. Pb Lead-free  Easy to Drive.  100% Avalanche Tested. APPLICATIONS  N-channel Enhancement mode Effect Transistor.  Switching Applications. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 650 V VGS ID IDM PD IAR EAS dv/dt Gate -Source Voltage Maximum Drain Current(continuous) at TC=25℃ TC=100℃ Drain Current(pulsed)Note1 Power Dissipation at TC=25℃ Avalavche Current,Repetitive or Not-repetitive Single Pulse Avalanche Energy (starting Tj=25℃,ID=IAR,VDD=50V) Peak Diode Recovery Voltage Slope(Note2) 25 12 7.3 48 90 4 200 15 V A A W A mJ V/ns RθJA Thermal Resistance,Junction-to-Ambient Tj Tstg Operating Junction and StorageTem-perature Range Note:1.Pulse width limited by sa.


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