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BL10N80F

GME

N-Channel Power MOSFET


Description
10A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =1.1Ω@ VGS = 10V  Ultra Low Gate Charge ( Typical 45 nC ) Pb Lead-free  Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF )  Fast Switching Capability  Avalanche Energy Specified  Improved dv/dt Capability, High Ruggedness Production specification BL10N80F ITO-220AB MAXIMUM RATING @ Ta=2...



GME

BL10N80F

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