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BL10N30F

GME

N-Channel Power MOSFET


Description
Production specification N-Channel Power MOSFET BL10N30F FEATURES  High switching speed.  RDS(ON)=0.65Ω @ VGS=10V.  100% avalanche tested.  Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS  N-Channel Power MOSFET.  Switching Applications. ITO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS D...



GME

BL10N30F

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