BH62UV1600

www.DataSheet4U.com BSI n FEATURES Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit n DESCRIPTION BH62UV1600 Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.0V Operation current : 5.0mA at 70ns at 25OC 1.5mA at 1MHz at 25OC Standby current : 3uA at 25OC VCC = 2.0V Data retention current : 3uA at 25OC Ÿ High speed access time : -70 70ns at 1.8V at 85OC Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refreash Ÿ Data retention supply voltage as low as 1.0V The BH62UV1600 is a high performance, ultra low power CMOS Static Random Access Memory organized as 2,048K by 8 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25OC and maximum access time of 70ns at 1.8V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH62UV1600 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH62UV1600 is made with two chips of 8Mbit SRAM by stacked multi-chip-package. The BH62UV1600 is available 48-ball BGA package. n PRODUCT FAMILY PRODUCT FAMILY OPERATING TEMPERATURE +0OC to +70OC ...