SILICON NPN TRANSISTOR
BFY51
• V(BR)CEO = 30V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose ...
SILICON NPN TRANSISTOR
BFY51
V(BR)CEO = 30V (Min). Hermetic TO-39 Metal Package. Ideally Suited General Purpose Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base
Voltage
60V
VCEO
Collector – Emitter
Voltage
30V
VEBO
Emitter – Base
Voltage
6V
IC Continuous Collector Current
1.0A
PD Total Power Dissipation at TA = 25°C
0.8W
Derate Above 25°C
4.57mW/°C
PD Total Power Dissipation at TC = 25°C
5W
Derate Above 25°C
28.6mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Max. 218.75
35
Units °C/W °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both...
