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BFN38 Datasheet

Part Number BFN38
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon High-Voltage Transistors
Datasheet BFN38 DatasheetBFN38 Datasheet (PDF)

BFN36, BFN38 NPN Silicon High-Voltage Transistors  Suitabled for video output stages in TV sets and 4 switching power supplies  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: BFN37, BFN39 (PNP) 3 2 1 VPS05163 Type BFN36 BFN38 Maximum Ratings Parameter Marking BFN 36 BFN 38 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BFN36 250 250 5 BFN38 300 300 5 Unit V Collector-emitter voltage Collector-b.

  BFN38   BFN38






Part Number BFN38
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon High-Voltage Transistors
Datasheet BFN38 DatasheetBFN38 Datasheet (PDF)

NPN Silicon High-Voltage Transistors BFN 36 BFN 38 Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BFN 37, BFN 39 (PNP) q Type BFN 36 BFN 38 Marking BFN 36 BFN 38 Ordering Code (tape and reel) Q62702-F1246 Q62702-F1303 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector.

  BFN38   BFN38







Part Number BFN38
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Datasheet BFN38 DatasheetBFN38 Datasheet (PDF)

www.DataSheet4U.com SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - JANUARY 1996 7 FEATURES: * High VCEO and Low saturation voltage APPLICATIONS: * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE - BFN39 PARTMARKING DETAILS - BFN38 BFN38 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperat.

  BFN38   BFN38







NPN Silicon High-Voltage Transistors

BFN36, BFN38 NPN Silicon High-Voltage Transistors  Suitabled for video output stages in TV sets and 4 switching power supplies  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: BFN37, BFN39 (PNP) 3 2 1 VPS05163 Type BFN36 BFN38 Maximum Ratings Parameter Marking BFN 36 BFN 38 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BFN36 250 250 5 BFN38 300 300 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 200 500 100 200 1.5 150 -65 ... 150 mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN36, BFN38 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V C.


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