DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor
Product specification File...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
NPN 9 GHz wideband transistor
FEATURES
High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV
amplifiers and repeater
amplifiers in fibre-optical systems.
The transistors are mounted in plastic SOT143B and SOT143R packages.
PINNING
PIN DESCRIPTION BFG540 (Fig.1) Code: N37 1 collector 2 base 3 emitter 4 emitter BFG540/X (Fig.1) Code: N43 1 collector 2 emitter 3 base 4 emitter BFG540/XR (Fig.2) Code: N49 1 collector 2 emitter 3 base 4 emitter
Product specification
BFG540; BFG540/X; BFG540/XR
handbook, 2 c4olumns
3
12
Top view
MSB014
Fig.1 SOT143B.
handbook, 2 co3lumns
4
21
Top view
MSB035
Fig.2 SOT143R.
September 1995
2
Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X; BFG540/XR
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO VCES IC Ptot hFE Cre fT
collector-base
voltage collector-emitter
voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency
GUM
maximum uni...