BFG25X

DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 http://www.Datasheet4U.com Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES Low current consumption (100 µA to 1 mA) Low noise figure Gold metallization ensures excellent reliability. APPLICATIONS RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 Top view BFG25A/X handbook, 2 columns 4 3 2 MSB014 Marking code: V11. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 165 °C IC = 0.5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C CONDITIONS − − − − 50 3.5 − − − MIN. − − − − 80 5 18 1.8 2 TYP. MAX. 8 5 6.5 32 200 − − − − GHz dB dB dB UNIT V V mA mW 1997 Oct 29 2 http://www.Datasheet4U.com Philips Semiconductors Product specification...