DISCRETE SEMICONDUCTORS
DATA SHEET
BFG25A/X NPN 5 GHz wideband transistor
Product specification Supersedes data of Sept...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG25A/X NPN 5 GHz wideband transistor
Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29
http://www.Datasheet4U.com
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES Low current consumption (100 µA to 1 mA) Low noise figure Gold metallization ensures excellent reliability. APPLICATIONS RF low power
amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
1 Top view
BFG25A/X
handbook, 2 columns 4
3
2
MSB014
Marking code: V11.
Fig.1 SOT143B.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base
voltage collector-emitter
voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 165 °C IC = 0.5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C CONDITIONS − − − − 50 3.5 − − − MIN. − − − − 80 5 18 1.8 2 TYP. MAX. 8 5 6.5 32 200 − − − − GHz dB dB dB UNIT V V mA mW
1997 Oct 29
2
http://www.Datasheet4U.com
Philips Semiconductors
Product specification...