BFG21W

DISCRETE SEMICONDUCTORS M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06 Philips Semiconductors Product specification UHF power transistor FEATURES High power gain High efficiency 1.9 GHz operating area Linear and non-linear operation. APPLICATIONS Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. Driver for DCS1800, 1900. DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. 2 Top view 1 MSB842 BFG21W PINNING PIN 1, 3 2 4 base collector DESCRIPTION emitter handbook, halfpage 3 4 Marking code: P1. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION Pulsed class-AB; δ < 1 : 2; tp = 5 ms f (GHz) 1.9 VCE (V) 3.6 PL (dBm) 26 Gp (dB) ≥10 ηC (%) typ.55 1998 Jul 06 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the emitter pins. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤...