DISCRETE SEMICONDUCTORS
DATA SHEET
BFG16A NPN 2 GHz wideband transistor
Product specification Supersedes data of Novemb...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG16A NPN 2 GHz wideband transistor
Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
FEATURES High power gain Good thermal stability Gold metallization ensures excellent reliability. DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. It is primarily intended for use in wideband
amplifiers, aerial
amplifiers and vertical
amplifiers in high speed oscilloscopes.
1
Top view
BFG16A
PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter
fpage
4
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 110 °C; note 1 open emitter open base open collector CONDITIONS MIN. − − − − − −65 − MAX. 40 25 2 150 1 +150 150 UNIT V V V mA W °C °C PARAMETER collector-base
voltage collector-emitter
voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain up to Ts = 110 °C;...