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BFG135A Datasheet

Part Number BFG135A
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Datasheet BFG135A DatasheetBFG135A Datasheet (PDF)

BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 6 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 135A BFG135A Q62702-F1322 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector.

  BFG135A   BFG135A






Part Number BFG135A
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon RF Transistor
Datasheet BFG135A DatasheetBFG135A Datasheet (PDF)

BFG 135A NPN Silicon RF Transistor  For low-distortion broadband amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA  Power amplifiers for DECT and PCN systems  Integrated emitter ballast resistor  fT = 6 GHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 135A Maximum Ratings Parameter Marking BFG135A 1=E Pin Configuration 2=B 3=E 4=C Package SOT-223 Symbol VCEO VCES V.

  BFG135A   BFG135A







NPN Silicon RF Transistor

BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 6 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 135A BFG135A Q62702-F1322 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 25 25 2 150 20 mW 1000 150 - 65 ... + 150 - 65 ... + 150 ≤ 50 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 100 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 120 - V µA 100 nA 50 µA 1 80 250 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 100 mA, VCE = 8 V Semiconductor Grou.


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