BFG135

DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors NPN 7GHz wideband transistor Product specification BFG135 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile. PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector lfpage 4 1 Top view 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. VCBO VCEO IC Ptot hFE fT GUM Vo collector-base voltage open emitter  collector-emitter voltage open base  DC collector current  total power dissipation up to Ts = 145 C (note 1)  DC current gain IC = 100 mA; VCE = 10 V; Tj = 25 C 80 transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz;  Tamb = 25 C maximum unilateral power IC = 100 mA; VCE = 10 V; f = 500 MHz;  gain Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz;  Tamb = 25 C output voltage dim = 60 dB; IC = 100 mA; VCE = 10 V;  RL = 75 ; Tamb = 25 C; f(p+qr) = 793.25 MHz TYP.     130 7 16 12 850 MAX. 25 15 150 1      UNIT V V mA W GHz dB dB mV LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER...