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BFG10X Datasheet

Part Number BFG10X
Manufacturers NXP
Logo NXP
Description UHF power transistor
Datasheet BFG10X DatasheetBFG10X Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial tr.

  BFG10X   BFG10X






Part Number BFG10W
Manufacturers NXP
Logo NXP
Description UHF power transistor
Datasheet BFG10X DatasheetBFG10W Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors UHF power transistor Product specification BFG10W/X FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar ep.

  BFG10X   BFG10X







Part Number BFG10
Manufacturers NXP
Logo NXP
Description NPN 2 GHz RF power transistor
Datasheet BFG10X DatasheetBFG10 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipmen.

  BFG10X   BFG10X







UHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter Marking code: T5. 1 BFG10W/X fpage 4 3 2 MBK523 Top view Fig.1 SOT343. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms f (GHz) 1.9 0.9 0.9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature up to Ts = 102 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − MIN. MAX. 20 10 2.5 250 250 400 +150 175 V V V mA mA mW °C °C UNIT VCE (V) 3.6 6 6 PL (mW) 200 650 360 Gp (dB) ≥5 ≥10 ≥12.5 ηc (%) ≥50 ≥50 ≥50 THERMA.


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