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BF94N60L Datasheet

Part Number BF94N60L
Manufacturers BYD
Logo BYD
Description N-Channel MOSFET
Datasheet BF94N60L DatasheetBF94N60L Datasheet (PDF)

BYD Microelectronics Co., Ltd. BF94N60/BF94N60L 600V N-Channel MOSFET General Description The N-Channel enhancement mode power field effect transistor is produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, el.

  BF94N60L   BF94N60L






Part Number BF94N60
Manufacturers BYD
Logo BYD
Description N-Channel MOSFET
Datasheet BF94N60L DatasheetBF94N60 Datasheet (PDF)

BYD Microelectronics Co., Ltd. BF94N60/BF94N60L 600V N-Channel MOSFET General Description The N-Channel enhancement mode power field effect transistor is produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, el.

  BF94N60L   BF94N60L







N-Channel MOSFET

BYD Microelectronics Co., Ltd. BF94N60/BF94N60L 600V N-Channel MOSFET General Description The N-Channel enhancement mode power field effect transistor is produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features z VDS =600 V z ID =4A z RDS(ON) =1.9 Ω TYP(VGS=10V ,ID=2A) z Low CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche Energy (Note2) IAR Avalanche Current (Note1) EAR RepetitiveAvalancheEnergy (Note1) dv/dt PeakDiodeRecoverydv/dt (Note3) PD .


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