BYD Microelectronics Co., Ltd.
General Description
The BF92301P uses advanced trench technology to provide excellent RDS...
BYD Microelectronics Co., Ltd.
General Description
The BF92301P uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications.
Features
z VDS (V) = -20V z ID = -2.8A z Low on-state resistance
RDS (on) = 80mΩ TYP. (VGS = -4.5V) RDS (on) =100mΩ TYP.(VGS = -2.5V)
BF92301P
20V P-Channel
MOSFET
Absolute Maximum Ratings (Ta = 25℃)
Parameter P-
MOSFET
Drain to Source
Voltage Gate to Source
Voltage Drain Current (DC) Drain Current (pulse)a Maximun Power Dissipationa Channel Temperature Storage Temperature
Symbol Value
VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg
-20 ±8 -2.8 -8 1.3 150 -55~+150
Unit
V V A A W ℃ ℃
Note: Mounted on FR4 Board of 1”x1”. Caution: These values must not be exceeded under any conditions.
Ordering Information
z Part Number : BF92301P
z Package :
SOT-23
Datasheet
ES-BYD-WDZCE03D-060 Rev.A/1
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BYD Microelectronics Co., Ltd.
BF92301P
Electr...
