BF90880SNL

BYD Microelectronics Co., Ltd. BF90880SNL 80V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirement. Features z VDS =80 V z ID =80A z Typical RDS(ON) =8m Ω (VGS=10V,ID=40A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD Power Dissipation (TC = 25°C) TJ,Tstg TL Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose （Note1） （Note2） （Note1） Value 80 80 320 ±20 1200 33 178 -55 to...