BF450

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF450 PNP medium frequency transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11 Philips Semiconductors Product specification PNP medium frequency transistor FEATURES Low current (max. 25 mA) Low voltage (max. 40 V). APPLICATIONS HF and IF stages in radio receivers Mixer stages in AM receivers. 1 handbook, halfpage BF450 PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP medium frequency transistor in a TO-92; SOT54 plastic package. Fig.1 2 3 3 1 2 MAM271 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = −1 mA; VCE = −10 V IC = −1 mA; VCE = −10 V; f = 100 MHz open emitter open base CONDITIONS − − − − 50 350 MIN. MAX. −40 −40 −25 300 − − MHz V V mA mW UNIT 1997 Jul 11 2 Philips Semiconductors Product specification PNP medium frequency transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VBE Cr...