BF419

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF419 NPN high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistor FEATURES Low current (max. 100 mA) High voltage (max. 250 V). APPLICATIONS Driver for line output transistors in colour television receivers. handbook, halfpage BF419 PINNING PIN 1 2 3 emitter collector connected to mounting base base DESCRIPTION DESCRIPTION NPN high-voltage transistor in a TO-126; SOT32 plastic package. 3 2 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE Cre fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tmb ≤ 90 °C IC = 20 mA; VCE = 10 V IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 100 MHz open emitter open base CONDITIONS − − − − 45 − 90 TYP. MAX. 300 250 300 6 − 3.5 − pF MHz V V mA W UNIT 1997 Apr 09 2 Philips Semiconductors Product specification NPN high-voltage transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base curren...