BF414

BF 414 NPN Silicon RF Transistor q BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type BF 414 Marking – Ordering Code Q62702-F517 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA ≤ 45 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 30 40 4 25 3 300 150 – 55 … + 150 Unit V mA mW ˚C 350 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 BF 414 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 2 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 20 V DC current gain IC = 4 mA, VCE = 10 V AC Characteristics Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz RS = 60 Ω fT – – Cce F – – 400 560 0.1 3 – – – – pF dB MHz V(BR) CE0 V(BR) CB0 V(BR) EB0 ICB0 hFE 30 40 4 – 30 – – – – 80 – – – 60 – nA – V Values typ. max. Unit Semiconductor Group 2 ...