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BF1009S

Silicon N-Channel MOSFET Tetrode

Description

BF1009S... Silicon N_Channel MOSFET Tetrode For low noise, high gain controlled input stage up to 1 GHz Operating voltage 9 V Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009S BF1009SR Maximum Ratings Parameter Package SOT143 SOT1...

Infineon Technologies AG

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BF1009S Silicon N-Channel MOSFET Tetrode - Siemens Semiconductor Group

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