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BDX87C

INCHANGE
Part Number BDX87C
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 7, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDX87C DESCRIPTION ·High DC Current Gain- : hFE= 75...
Datasheet PDF File BDX87C PDF File

BDX87C
BDX87C

Overview
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDX87C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type BDX88C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 UNIT V VCEO VEBO IC ICM IB PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage T...


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