SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX65B
www.datasheet4u.com
DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX65B
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·DARLINGTON ·Complement to type BDX64B APPLICATIONS ·Designed for power amplification and switching applications.
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 100 5 12 16 0.2 117 -55~200 -55~200 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX65B
CHARACTERISTICS
www.datasheet4u.com
Tj=25
unless otherwise specified PARAMETER Collector-emitter sustaining
voltage Collector-emitter saturation
voltage Base-emitter on
voltage Collector cut-off current Collector cut-off current Emitter cut-off current Diode forward
voltage DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0;L=25mH IC=5A ;IB=20mA IC=5A;VCE=3V VCB=100V; IE=0 TC=150 VCE=50V; IB=0 VEB=5V; IC=0 IF=3A IC=1A ; VCE=3V IC=5A ; VCE=3V IC=10A ; VCE=3V IC=5A ; VCE=3V 1000 1500 7 MHz 1.8 1500 M...