NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor
BDX53B
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 80V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage
: VCE(sat) = 2.0 V(Max) @ IC = 3.0 A ·Complement to Type BDX54B ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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