BDX34C

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C Low Collector−Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B, 33C/34B, 34C Monolithic Construction with Build−In Base−Emitter Shunt Resistors These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C Symbol VCEO Value 80 100 Unit Vdc Collector−Base Voltage BDX33B, BDX34B BDX33C, BDX34C VCB Vdc 80 100 Emitter−Base Voltage Collector Current Continuous Peak VEB 5.0 Vdc IC 10 Adc 15 Base Current IB 0.25 Adc Total Device Dissipation @ TC = 25°C PD 70 W Derate above 25°C 0...