isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)...
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDW83
45
VCER
Collector-Emitter
Voltage
BDW83A
60
BDW83B
80
BDW83C
100
BDW83
45
VCEO
Collector-Emitter
Voltage
BDW83A
60
BDW83B
80
BDW83C
100
VEBO
Emitter-Base
Voltage
5
IC
Collector Current-Continuous
15
IB
Base Current-Continuous
0.5
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
3.5 150
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.83 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W
BDW83/A/B/C
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isc Silicon NPN Darlington Power Transistor
BDW83/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDW83
45
V(BR)CEO
Collector-Emitter Breakdown
Voltage
BDW83A BDW83B
IC= 30mA ;IB=0
60 80
V
BDW83C
100
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 6A; IB= 12mA
2.5
V
VCE(sat)-2 Collector-Emitter Saturation
Voltage...