isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Volt...
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDV64
-60
VCBO
Collector-Base
Voltage
BDV64A BDV64B
-80 -100
BDV64C
-120
BDV64
-60
VCEO
Collector-Emitter
Voltage
BDV64A BDV64B
-80 -100
BDV64C
-120
VEBO
Emitter-Base
Voltage
-5
IC
Collector Current-Continuous
-12
ICM
Collector Current-Peak
-20
IB
Base Current-Continuous
-0.5
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@ Ta=25℃
125 3.5
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
BDV64/A/B/C
isc website:www.iscsemi.com
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isc Silicon PNP Darlington Power Transistor
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX UNIT 1.0 ℃/W 35.7 ℃/W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV64
V(BR)CEO
Collector-Emitter Breakdown
Voltage
BDV64A BDV64B
IC= -30mA; IB= 0
BDV64C
VCE(sat) Collector-Emitter Saturation
Voltage IC= -5A; IB= -20mA
VBE(on) Base-Emitter On Voltag...