isc Silicon NPN Power Transistors
BDT81/83/85/87
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitte...
isc Silicon NPN Power Transistors
BDT81/83/85/87
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87
·Complement to Type BDT82/84/86/88 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT81
60
BDT83
80
VCBO
Collector-Base
Voltage
V
BDT85
100
BDT87
120
BDT81
60
VCEO
Collector-Emitter
Voltage
BDT83
80
V
BDT85
100
BDT87
120
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
4
A
125
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
isc website:www.iscsemi.com
MAX UNIT 1 ℃/W 70 ℃/W
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isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT81
VCEO(SUS)
Collector-Emitter Sustaining
Voltage
BDT83 BDT85
IC= 30mA; IB= 0
BDT87
VCE(sat)-1 VCE(sat)-2 VBE(on)
ICES
Collector-Emitter Saturation
Voltage Collector-Emitter Saturation
Voltage Base...