NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTORS
The BDT81 – BDT83 – BDT85 – BDT87 are epitaxial base ...
NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTORS
The BDT81 – BDT83 – BDT85 – BDT87 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. PNP complements are BDT82 – BDT84 – BDT86 – BDT88. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
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Value
BDT81 BDT83 BDT85 BDT87 BDT81 BDT83 BDT85 BDT87 60 80 100 120 60 80 100 120 7 15 20 4 125 150 -65 to +150
Unit
VCEO
Collector-Emitter
Voltage
IB = 0
V
VCBO VEBO IC ICM IB Pt TJ TStg
Collector-Base
Voltage Emitter-Base
Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature
IE = 0 IC = 0
V V A A A W °C °C
@ TC = 25°
THERMAL CHARACTERISTICS Symbol
RthJa RthJmb
Ratings
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Mounting Base COMSET SEMICONDUCTORS
Value
70 1
Unit
K/W K/W
1|4
09/11/2012
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BDT81 – BDT83 – BDT85 – BDT87
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IE=0A, VCB = 60 V IE=0A, VCB = 80 V IE=0A, VCB = 100 V IE=0A, VCB = 120 V VBE=0, VCE = 60V VBE=0, VCE = 80V VBE=0, VCE = 100V VBE=0, VCE = 120V VEB= 7 V IC=0
www.DataSheet.net/
Min
Typ
Max
Unit
ICB0
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 50mA VCE= 10V hFE ...
