BD900A

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD895A/897A/901A ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD896A/898A/900A Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD896A VCBO Collector-base voltage BD898A BD900A BD896A VCEO Collector-emitter voltage BD898A BD900A VEBO IC IB Emitter-base voltage Collector current-DC Base current TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -65~150 Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -45 -60 -80 -5 -8 -300 70 W V A mA V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD896A V(BR)CEO Collector-emitter breakdown voltage BD898A BD900A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896A ICBO Collector cut-off current BD898A BD900A BD896A ICEO Collector cut-off current BD898A BD900A IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward voltage Turn-on time Turn-off time IC=-4A ,IB=-16mA IC=-4A ; VCE=-3V VCB=-45V, IE=0 TC=100 VCB=-60V, IE=0 TC=100 VCB=-80V, IE=0 TC=100 VCE=-30V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VEB=-5V; IC=0 IC=-4A ; VCE=-3V IE=-8A IC=3A...