isc Silicon NPN Darlington Power Transistor
BD895A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 4A ·Collector Power Dissipation-
: PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD896A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operat...
