BD711

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS ·Intented for use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD707 BD709 BD711 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD707 VCBO Collector-base voltage BD709 BD711 BD707 VCEO Collector-emitter voltage BD709 BD711 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Total dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 12 18 5 75 150 -65~150 V A A A W V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.67 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD707 BD709 BD711 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD707 CONDITIONS MIN 60 IC=0.1A, IB=0 80 100 IC=4A ,IB=0.4A IC=4A , VCE=4V BD707 VCB=60V, IE=0 TC=150 VCB=80V, IE=0 TC=150 VCB=100V, IE=0 TC=150 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2A ; VCE=2V IC=4A ; VCE=2V BD707 40 30 15 5 IC=10A ; VCE=4V 10 8 8 IC=0.3A;VCE=3V; 3 MHz 150 120 1.0 400 mA 0.1 mA 1.0 1.5 0.1 1.0 0.1 1.0 0.1 1.0 V V V TYP. MAX UNIT SYMBOL VCEO(SUS) C...