BD708

BD707/709/711 ® BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS s COMPLEMENTARY PNP - NPN DEVICES APPLICATION s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The BD707 and BD711 complementary PNP types are BD708 and BD712 respectively. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sy mb o l Parameter VCBO Collector-Base Voltage (IE = 0) VCER Collector-Emitter Voltage (VBE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current IB Base Current Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature For PNP types voltage and current values are negative September 1999 NPN PNP BD707 BD708 60 60 60 Value BD709 80 80 80 5 12 18 5 75 -65 to 150 150 BD711 BD712 100 100 100 Un it V V V V A A A W oC oC 1/6 BD707/708/709/711/712 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-case Thermal Resistance Junction-ambient Max Max 1.67 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Pa ram et e r Test Conditions ICBO Collector Cut-off Current (IE = 0) for BD707/708 for BD709 for BD711/712 Tcase = 150 oC for BD707/708 for BD709 for BD711/712 ICEO Collector Cut-off Current (IB =...