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BD676G Datasheet

Part Number BD676G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Transistor
Datasheet BD676G DatasheetBD676G Datasheet (PDF)

BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 •.

  BD676G   BD676G






Part Number BD676AG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Transistor
Datasheet BD676G DatasheetBD676AG Datasheet (PDF)

BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 •.

  BD676G   BD676G







Part Number BD676A
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BD676G DatasheetBD676A Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD675A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Em.

  BD676G   BD676G







Part Number BD676A
Manufacturers CDIL
Logo CDIL
Description PNP DARLIGNTON POWER SILICON TRANSISTORS
Datasheet BD676G DatasheetBD676A Datasheet (PDF)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  PNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676A BD678, 678A BD680, 680A BD682, 684 ECB TO126 Plastic Package For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBO.

  BD676G   BD676G







Part Number BD676A
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description Power Transistor
Datasheet BD676G DatasheetBD676A Datasheet (PDF)

PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD676/A BD678/A BD680/A BD682/A BD676/A BD678/A BD680/A BD682/A -IC -ICM -IBM @ Tmb = 25°C Value 45 60 80 .

  BD676G   BD676G







PNP Transistor

BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG VCEO Vdc 45 60 80 100 Collector-Base Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG VCB Vdc 45 60 80 100 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 4.0 Adc IB 0.1 Adc PD 40 W 0.32 W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Case RqJC 3.13 Unit °C/W http://onsemi.com 4.0 AMP DARLINGTON POWER TRANSISTORS PNP SILICON 45, 60, 80, 100 VOLT.


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