BD311

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD311 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD312 APPLICATIONS ·Designed for power amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 60 60 5 10 20 4 115 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.52 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD311 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=5A ;IB=0.5A IC=5A ;IB=0.5A IC=5A ;VCE=4V VCB=rated;IE=0 VEB=7V; IC=0 IC=5A ; VCE=4V IC=10A ; VCE=4V IC=0.5A ; VCE=10V,f=1MHz 25 5 4 MHz MIN 60 1.0 1.8 1.5 1.0 1.0 TYP. MAX UNIT V V V V mA mA...