BD249A

isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 25A ·Complement to Type BD250/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD249 55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD249A BD249B 70 90 V BD249C 115 BD249 45 VCEO Collector-Emitter Voltage BD249A 60 V BD249B 80 BD249C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 3 W 125 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W INCHANGE Semiconductor BD249/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD249/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD249 45 V(BR)CEO Collector-Emitter Breakdown Voltage BD249A BD249B IC= 30mA ;IB=0 60 80 V BD249C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A 1.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A 4.0 V VBE(on)-1 Ba...