BD243B

® BD243B/BD243C BD244B/BD244C COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. TO-220 1 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc ≤ 25 C Storage T emperature Max. O perating Junction Temperature o Value BD243B BD244B 80 80 5 6 10 2 65 -65 to 150 150 BD243C BD244C 100 100 Uni t V V V A A A W o o C C For PNP types voltage and current values are negative. September 1999 1/4 BD243B / BD243C / BD244B / BD244C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.92 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEO V CE = 60 V V EB = 5 V I C = 30 mA for BD243B/BD244B for BD243C/BD244C IC = 6 A IC = 6 A I C = 0.3 A IC = 3 A I C = 0.5 A I C = 0.5 A IB...