BD234

BD234 SILICON PNP TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CER V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 1K Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value -45 -45 -45 -5 -2 -6 25 -65 to 150 150 Unit V V V V A A W o o C C May 1997 1/4 BD234 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -45 V V CB = -45 V V EB = -5 V I C = -100 mA I C = -1 A I C = -1 A I C = -150 mA I C = -1 A I C = -250 mA I C = -150 mA I B = -0.1 A V CE = -2 V V CE = -2 V V CE = -2 V V CE = -10 V V CE = -2 V 40 25 3 1.6 MHz -45 -0.6 -1.3 T c = 150 C o Min. Typ. Max. -0.1 -2 -1 Unit mA mA mA V V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE ∗ h FE ∗ fT Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition frequency h FE1 /h FE2 ∗ Matched...