BD234
SILICON PNP TRANSISTOR
s s
SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR
DESCRIPTION The BD234 is a silicon epi...
BD234
SILICON PNP TRANSISTOR
s s
SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR
DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.
3 2 1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CER V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base
Voltage (I E = 0) Collector-Emitter
Voltage (R BE = 1K Ω ) Collector-Emitter
Voltage (I B = 0) Emitter-Base
Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value -45 -45 -45 -5 -2 -6 25 -65 to 150 150 Unit V V V V A A W
o o
C C
May 1997
1/4
BD234
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -45 V V CB = -45 V V EB = -5 V I C = -100 mA I C = -1 A I C = -1 A I C = -150 mA I C = -1 A I C = -250 mA I C = -150 mA I B = -0.1 A V CE = -2 V V CE = -2 V V CE = -2 V V CE = -10 V V CE = -2 V 40 25 3 1.6 MHz -45 -0.6 -1.3 T c = 150 C
o
Min.
Typ.
Max. -0.1 -2 -1
Unit mA mA mA V V V
V CEO(sus) ∗ Collector-Emitter Sustaining
Voltage V CE(sat) ∗ V BE ∗ h FE ∗ fT Collector-Emitter Saturation
Voltage Base-Emitter
Voltage DC Current Gain Transition frequency
h FE1 /h FE2 ∗ Matched...