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BD226

INCHANGE
Part Number BD226
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Mar 16, 2018
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD227/229/...
Datasheet PDF File BD226 PDF File

BD226
BD226

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.
15A ·Complement to Type BD227/229/231 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driver stages in television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD226 45 VCBO Collector-Base Voltage BD228 60 BD230 100 BD226 45 VCEO Collector-Emitter Voltage BD228 60 BD230 80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD226 45 BD228 60 BD230 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 1.
5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤62℃ TJ Junction ...


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