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BD203

Inchange Semiconductor
Part Number BD203
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Dec 3, 2012
Detailed Description isc Silicon NPN Power Transistor BD201/203 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD...
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BD203
BD203

Overview
isc Silicon NPN Power Transistor BD201/203 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complement to Type BD202/204 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD201 60 VCBO Collector-Base Voltage V BD203 60 BD201 45 VCEO Collector-Emitter Voltage V BD203 60 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak tp≤10ms 12 A ICSM Collector Current-Peak tp≤2ms 25 A...


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