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BD137 Datasheet

Part Number BD137
Manufacturers Toshiba
Logo Toshiba
Description Silicon NPN Transistor
Datasheet BD137 DatasheetBD137 Datasheet (PDF)

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM R.

  BD137   BD137






Part Number BD137
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BD137 DatasheetBD137 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·Complement to type BD138 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC TJ Tstg Collector-Base Vo.

  BD137   BD137







Part Number BD137
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet BD137 DatasheetBD137 Datasheet (PDF)

BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD13.

  BD137   BD137







Part Number BD137
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description NPN POWER TRANSISTORS
Datasheet BD137 DatasheetBD137 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD BD137 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS  FEATURES * High current (max.1.5A) * Low voltage (max.60V) 1 SOT-223 1 TO-126  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - BD137G-x-AA3-R BD137L-xx-T60-K BD137G-xx-T60-K Package SOT-223 TO-126 Pin Assignment 123 BCE ECB Packing Tape Reel Bulk BD137G-xx-AA3-R (1)Packing Type (2)Package Type (3)Rank (4)Green Package  MARKING SOT-223 (1) R: Tape Reel, K: Bulk (2) AA3: SOT-223.

  BD137   BD137







Part Number BD137
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description NPN SILICON TRANSISTOR
Datasheet BD137 DatasheetBD137 Datasheet (PDF)

BD135 BD137 BD139 NPN SILICON TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation (Tmb≤.

  BD137   BD137







Part Number BD137
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet BD137 DatasheetBD137 Datasheet (PDF)

BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10.

  BD137   BD137







Silicon NPN Transistor

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 45 60 80 45 60 80 0.5 1.5 PC L stg 6.5 150 -55-150 UNIT 1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE TO— 126 TOSHIBA 2-8P1A Weight : 0.72g ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO V CB=30V, I E=0 Vcb=30V, lE=0, Ta=125°C Emitter Cut-off Current lEBO VEB=5V, I C =0 Collector-Emitter Breakdown Voltage BD135 BD137 V(BR)CE0 IC=30mA, Ib=0 BD139 DC Current Gain Collector-Emitter Saturation Voltage hFE(l) VcE=.


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