BD132

isc Silicon PNP Power Transistor ESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -45V(Min.) ·Complement to type BD131 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6 ℃/W BD132 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -2A; IB= -0.2A VCB= -40V; IE= 0 VCB= -40V; IE= 0,TC=150℃ VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -12V ...