DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD131 NPN power transistor
Product specification Supersedes d...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD131 NPN power transistor
Product specification Supersedes data of 1997 Mar 04 1999 Apr 12
Philips Semiconductors
Product specification
NPN power transistor
FEATURES High current (max. 3 A) Low
voltage (max. 45 V). APPLICATIONS General purpose power applications. DESCRIPTION
handbook, halfpage
BD131
PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD132.
3
2
1
1
2
3
Top view
MAM254
Fig.1
Simplified outline (TO-126; SOT32) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 60 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 70 45 6 3 6 0.5 15 +150 150 +150 V V V A A A W °C °C °C UNIT
1999 Apr 12
2
Philips Semiconductors
Product specification
NPN power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1. Refer to TO-126; SOT32 standard mounting conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBEsat fT PARAMETER collector cut-off current emitter cut-...