BCX19

BCX19 BCX19 NPN Medium Power Transistor This device is designed for general purpose amplifiers. Sourced from process 38. 3 2 1 SOT-23 Mark: U1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 45 50 5.0 500 -55 ~ +150 Units V V V mW °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, IC = 0 VCB = 20V, IE = 0 VCB = 20V, IE = 0, TA = 150°C VEB = 5.0V, IC = 0 IC = 100mA, VCE = 1.0V IC = 300mA, VCE = 1.0V IC = 500mA, VCE = 1.0V IC = 500mA, IB = 50mA IC = 500mA, VCE = 1.0V 100 70 40 Min. 45 50 100 5.0 10 600 Typ. Max. Units V V nA µA µA Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CES ICBO IEBO hFE Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain On Characteristics VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage 0.62 1.2 V V Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max. 300 2.4 417 Units mW mW/°C °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 BCX19 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 ...