BCF81

BCF 81 NPN www.DataSheet4U.com General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g 0.4 3 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25/C) BCF 81 45 V 50 V 5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65…+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 100/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V VCE = 5 V, IC = 2 mA IEB0 hFE – 420 ICB0 ICB0 – – Kennwerte (Tj = 25/C) Typ. – – – – Max. 100 nA 10 :A 100 nA 800 DC current gain – Kollektor-Basis-Stromverhältnis 2) 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage au...