SMD Type
www.DataSheet4U.com
Transistors IC
PNP General Purpose Transistors BCF29,BCF30
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0....
SMD Type
www.DataSheet4U.com
Transistors IC
PNP General Purpose Transistors BCF29,BCF30
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
Low current (max. 100 mA). Low
voltage (max. 32 V).
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Peak collector current Peak base current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth j-a Rating -32 -32 -5 -100 -200 -100 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
www.DataSheet4U.com
Transistors IC
BCF29,BCF30
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain BCF29 BCF30 DC current gain BCF29 BCF30 Collector-emitter saturation
voltage VCE(sat) IC = -10 mA; IB = -0.5 mA IC = -50 mV; IB = -2.5 mA Base to emitter saturation
voltage Base to emitter
voltage Collector capacitance Transition frequency Noise figure VBE(sat) VBE CC fT NF IC = -10 mA; IB = -0.5 mA IC = -50 mA; IB = -2.5 mA IC = -2 mA; VCE = -5 V IE = ie = 0; VCB = -10 V; f = 1 MHz IC = -10 mA; VCE = -5 V; f = 100 MHz IC = -200 ...