BC859

SEMICONDUCTOR TECHNICAL DATA BC859/860 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. For Complementary with NPN Type BC849/850 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage BC859 BC860 VCBO -30 -50 Collector-Emitter Voltage BC859 BC860 VCEO -30 -45 Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VEBO IC PC * Tj Tstg -5 -100 350 150 -55 150 PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA mW Q ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Emitter Breakdown Voltage BC859 BC860 V(BR)CEO IC=-10mA, IB=0 Collector-Base Breakdown Voltage BC859 BC860 Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure V(BR)CBO V(BR)EBO ICBO hFE VBE(ON) 1 VBE(ON) 2 VCE(sat) 1 VCE(sat) 2 VBE(sat) 1 VBE(sat) 2 fT Cob NF Note : hFE Classification A:125 250, B:220 475 IC=-10 A, IE=0 IE=-10 A, IC=0 VCB=-30V, IE=0 IC=-2mA, VCE=-5V IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, IE=0, f=1MHz IC=-200 A, VCE=-5V Rg=10k , f=1kHz Marking MARK SPEC TYPE MARK BC859A 4A BC859B 4B BC860A 4E BC860B 4G Type Name C N K ...