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BC856W Datasheet

Part Number BC856W
Manufacturers CDIL
Logo CDIL
Description PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet BC856W DatasheetBC856W Datasheet (PDF)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC856AW =3A BC856BW =3B BC857W =3H BC857AW =3E BC857BW =3F BC857CW =3G BC858W =3M General Purpose Switching and Amplification. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC856W Collector Base Voltage Collector Emitter Voltage VCBO VCEO 80 65 Emitter Bas.

  BC856W   BC856W






Part Number BC856W
Manufacturers LITE-ON
Logo LITE-ON
Description PNP General Purpose Transistor
Datasheet BC856W DatasheetBC856W Datasheet (PDF)

PNP General Purpose Transistor BC856W FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temper.

  BC856W   BC856W







Part Number BC856W
Manufacturers NXP
Logo NXP
Description PNP general purpose transistors
Datasheet BC856W DatasheetBC856W Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 12 2002 Feb 04 NXP Semiconductors PNP general purpose transistors Product data sheet BC856W; BC857W; BC858W FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W. .

  BC856W   BC856W







Part Number BC856W
Manufacturers GME
Logo GME
Description PNP Silicon Epitaxial Planar Transistor
Datasheet BC856W DatasheetBC856W Datasheet (PDF)

Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z For AF input stages and driver applications. z High current gain. Pb Lead-free z Low collector-emitter saturation voltage. z Low noise between 30Hz and 15 kHz. z Complementary types:BC846W,BC847W,BC848W. APPLICATIONS z General purpose switching and amplification application. SOT-323 ORDERING INFORMATION Type No. Marking BC856W BC857W BC858W 3A/3B 3E/3F/3G 3J/3K/3L Package Code SOT-323 S.

  BC856W   BC856W







Part Number BC856W
Manufacturers JCET
Logo JCET
Description PNP Transistor
Datasheet BC856W DatasheetBC856W Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856W BC857W BC858W TRANSISTOR (PNP) SOT-323 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Tstg Parameter Collector-Base Voltage BC856W BC857W BC858W Collector-Emitter Voltage BC856W BC857W BC858W Emitter-Base Voltage Collector Current –Co.

  BC856W   BC856W







Part Number BC856W
Manufacturers Diotec Semiconductor
Logo Diotec Semiconductor
Description Surface mount Si-Epitaxial PlanarTransistors
Datasheet BC856W DatasheetBC856W Datasheet (PDF)

BC856W ... BC859W BC856W ... BC859W PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2011-07-11 Power dissipation – Verlustleistung 2±0.1 0.3 3 1±0.1 Plastic case Kunststoffgehäuse 2.1±0.1 1.25±0.1 Type Code 12 1.3 Dimensions - Maße [mm] 1=B 2=E 3=C Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard .

  BC856W   BC856W







PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC856AW =3A BC856BW =3B BC857W =3H BC857AW =3E BC857BW =3F BC857CW =3G BC858W =3M General Purpose Switching and Amplification. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC856W Collector Base Voltage Collector Emitter Voltage VCBO VCEO 80 65 Emitter Base Voltage VEBO 5 Collector Current (DC) IC Peak Collector Current Peak Base Current ICM IBM Power Dissipation upto Tamb=25ºC *Ptot Storage Temperature Tstg Junction Temperature Tj Operating Ambient Temperature Tamb BC857W 50 45 5 100 200 200 200 - 65 to +150 150 - 65 to +150 BC858W 30 30 5 UNITS V V V mA mA mA mW ºC ºC ºC THERMAL RESISTANCE From junction to ambient *Rth (j-a) 625 K/W *Sot-323 standard mounting condition ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless sp.


2017-08-03 : BC857W    2SC3356W    2SC1623W    S9015W    S9014W    S9014W    S9014W    9015W    S9014W    S9014W   


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