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BC848BLT1 Datasheet

Part Number BC848BLT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description NPN Silicon Transistor
Datasheet BC848BLT1 DatasheetBC848BLT1 Datasheet (PDF)

General Purpose Transistors NPN Silicon BC846ALT1G Series Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc BC846 65 BC847.

  BC848BLT1   BC848BLT1






Part Number BC848BLT1
Manufacturers Motorola Inc
Logo Motorola  Inc
Description General Purpose Transistors
Datasheet BC848BLT1 DatasheetBC848BLT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846ALT1/D General Purpose Transistors BC846ALT1,BLT1 BC847ALT1, COLLECTOR 3 NPN Silicon 1 BASE BLT1,CLT1 thru BC850ALT1,BLT1, CLT1 BC846, BC847 and BC848 are Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 100 2 EMITTER Unit V.

  BC848BLT1   BC848BLT1







NPN Silicon Transistor

General Purpose Transistors NPN Silicon BC846ALT1G Series Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc BC846 65 BC847, BC850 45 BC848, BC849 30 Collector−Base Voltage VCBO Vdc BC846 80 BC847, BC850 50 BC848, BC849 30 Emitter−Base Voltage VEBO Vdc BC846 6.0 BC847, BC850 6.0 BC848, BC849 5.0 Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR− 5 Board, PD (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA Total Device Dissipation PD Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. Max 225 1.8 556 300 2.4 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C .


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